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DG9431
Vishay Siliconix
Low-Voltage Single SPDT Analog Switch
FEATURES
D D D D D D D D D Low Voltage Operation (+2.7 to +5 V) Low On-Resistance - rDS(on): 20 W Fast Switching - tON : 35 ns, tOFF: 20 ns Low Leakage - ICOM(on): 200-pA max Low Charge Injection - QINJ: 1 pC Low Power Consumption TTL/CMOS Compatible ESD Protection > 2000 V (Method 3015.7) Available in TSOP-6 and SOIC-8
BENEFITS
D D D D Reduced Power Consumption Simple Logic Interface High Accuracy Reduce Board Space (TSOP-6)
APPLICATIONS
D D D D D D D Battery Operated Systems Portable Test Equipment Sample and Hold Circuits Cellular Phones Communication Systems Military Radio PBX, PABX Guidance and Control Systems
DESCRIPTION
The DG9431 is a single-pole/double-throw monolithic CMOS analog device designed for high performance switching of analog signals. Combining low power, high speed (tON: 35 ns, tOFF: 20 ns), low on-resistance (rDS(on): 20 W) and small physical size (TSOP-6), the DG9431 is ideal for portable and battery powered applications requiring high performance and efficient use of board space. The DG9431 is built on Vishay Siliconix's low voltage BCD-15 process. Minimum ESD protection, per Method 3015.7, is 2000 V. An epitaxial layer prevents latchup. Break-before -make is guaranteed for DG9431. Each switch conducts equally well in both directions when on, and blocks up to the power supply level when off.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
TSOP-6
IN V+ GND 1 2 3 Top View 6 5 4 NO COM NC
TRUTH TABLE Logic
0 1
NC
ON OFF Logic "0" v0.8 V Logic "1"w 2.4 V
NO
OFF ON
SOIC-8
NO COM NC GND 1 2 3 4 Top View *Not Connected 8 7 6 5 V+ IN * *
ORDERING INFORMATION Temp Range
-40 to 85C SOIC-8 DG9431DY
Package
TSOP-6
Part Number
DG9431DV
Document Number: 70831 S-63598--Rev. B, 26-Jul-99
www.vishay.com S FaxBack 408-970-5600
4-1
DG9431
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Reference to GND V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +13 V IN, COM, NC, NOa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to (V+ + 0.3 V) Continuous Current (Any terminal) . . . . . . . . . . . . . . . . . . . . . . . . . . . "20 mA Peak Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "40 mA (Pulsed at 1ms, 10% duty cycle) ESD (Method 3015.7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . > 2000 V Storage Temperature (D Suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 125C Power Dissipation (Packages)b 8-Pin Narrow Body SOICc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400 mW Notes: a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 6.5 mW/_C above 75_C
SPECIFICATIONS (V+ = 3 V)
Test Conditions Otherwise Unless Specified Parameter P Analog Switch
Analog Signal Ranged Drain-Source On-Resistance rDS(on) Matchd rDS(on) Flatnessf VANALOG rDS(on) DrDS(on) rDS(on) Flatness INO/NC(off) ICOM(off) ICOM(on) VNO or VNC = 1.5 V, V+ = 2.7 V ICOM = 5 mA VNO or VNC = 1.5 V VNO or VNC = 1 and 2 V VNO or VNC = 1 V / 2 V, VCOM = 2 V / 1 V VCOM = 1 V / 2 V, VNO or VNC = 2 V / 1 V VCOM = VNO or VNC = 1 V / 2 V Full Room Full Room Room Room Full Room Full Room Full -100 -5000 -100 -5000 -200 -10000 0 30 0.4 4 5 5 10 3 50 80 2 8 100 5000 100 5000 200 10000 pA A W V
D Suffix
-40 to 85_C
Symbol S bl
V+ = 3 V, "10%, VIN = 0.8 or 2.4 Ve
Tempa T
Minc
Typb
Maxc
Unit
NO or NC Off Leakage Current g COM Off Leakage Current g Channel-On Leakage Current g
Digital Control
Input Current IINL or IINH Full 1 mA
Dynamic Characteristics
Turn-On Time Turn-Off Time Break-Before-Make Time Charge Injection Off-Isolation Source-Off Capacitance Channel-On Capacitance tON tOFF td QINJ OIRR CS(off) CD(on) CL = 1 nF, Vgen = 0 V, Rgen = 0 W RL = 50 W, CL = 5 pF, f = 1 MHz f = 1 MHz Room 32 1.5 VNO or VNC = 1 5 V Room Full Room Full Room Room Room Room 3 50 20 20 1 -74 7 pF 5 pC dB 120 200 50 120 ns
Power Supply
Power Supply Range Power Supply Current V+ I+ V+ = 3.3 V, VIN = 0 or 3.3 V 2.7 12 1 V mA
Notes: a. Room = 25C, Full = as determined by the operating suffix. b. Typical values are for design aid only, not guaranteed nor subject to production testing. c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. d. Guarantee by design, nor subjected to production test. e. VIN = input voltage to perform proper function. f. Difference of min and max values. g. Guaranteed by 5-V leakage testing, not production tested. www.vishay.com S FaxBack 408-970-5600 Document Number: 70831 S-63598--Rev. B, 26-Jul-99
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DG9431
Vishay Siliconix
SPECIFICATIONS (V+ = 5 V)
Test Conditions Otherwise Unless Specified Parameter P Analog Switch
Analog Signal Ranged Drain-Source On-Resistance rDS(on) Matchd rDS(on) Flatnessf VANALOG rDS(on) DrDS(on) rDS(on) Flatness INO/NC(off) ICOM(off) ICOM(on) VNO or VNC = 3.5 V, V+ = 4.5 V ICOM = 5 mA VNO or VNC = 1.5 V VNO or VNC = 1, 2, and 3 V VNO or VNC = 1 V / 4 V, VCOM = 4 V / 1 V VCOM = 1 V / 4 V, VNO or VNC = 4 V / 1 V VCOM = VNO or VNC = 1 V / 4 V Full Room Full Room Room Room Full Room Full Room Full -100 -5000 -100 -5000 -200 -10000 0 20 0.4 2 10 10 5 30 50 2 6 100 5000 100 5000 200 10000 pA A W V
D Suffix
-40 to 85_C
Symbol S bl
V+ = 5 V, "10%, VIN = 0.8 or 2.4 Ve
Tempa T
Minc
Typb
Maxc
Unit
NO or NC Off Leakage Current COM Off Leakage Current Channel-On Leakage Current
Digital Control
Input Current IINL or IINH Full 1 mA
Dynamic Characteristics
Turn-On Time Turn-Off Time Break-Before-Make Time Charge Injection Off-Isolation NC and NO Capacitance Channel-On Capacitance tON tOFF td QINJ OIRR C(off) CD(on) CL = 1 nF, Vgen = 0 V, Rgen = 0 W RL = 50 W, CL = 5 pF, f = 1 MHz f = 1 MHz Room 32 3.0 VNO or VNC = 3 0 V Room Full Room Full Room Room Room Room 3 35 20 10 2 -74 -7 pF 5 pC dB 75 150 50 100 ns
Power Supply
Power Supply Range Power Supply Current V+ I+ V+ = 5.5 V, VIN = 0 or 5.5 V 2.7 12 1 V mA
Notes: a. b. c. d. e. f. Room = 25C, Full = as determined by the operating suffix. Typical values are for design aid only, not guaranteed nor subject to production testing. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. Guarantee by design, nor subjected to production test. VIN = input voltage to perform proper function. Difference of min and max values.
Document Number: 70831 S-63598--Rev. B, 26-Jul-99
www.vishay.com S FaxBack 408-970-5600
4-3
DG9431
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Charge Injection
2.0 1.5 1.0 0.5 Q INJ (pC) 0.0 -0.5 -1.0 -1.5 -2 0 0.5 1.0 1.5 VCOM 2.0 2.5 3.0 I SUPPLY ( m A) V+ = 3 V 3000 2500 2000 1500 1000 500 0 V+ = 3 V -500 0 1 2 VIN 3 4 5 V+ = 5 V
Supply Current vs. VIN
Leakage Current vs. Temperature
10 nA -40
Off-Isolation vs. Frequency
1 nA OFF-Isolation (dB) 125 I COM(off) (A)
-60
100 pA ICOM(off) 10 pA ICOM(on)
-80
-100
1 pA
-120
0.1 pA 25 45 65 85 105
-140 0.001 M 0.01 M 0.1 M Frequency (Hz) 1M 10 M
Temperature (_C)
Off-Leakage vs. Voltage @ 25_C
2.5 2.0 1.5 1.0 I OFF (pA) 0.5 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 0 1 2 VCOM www.vishay.com S FaxBack 408-970-5600 3 4 5 12 0 1 INO/NC r DS(on) ( W ) ICOM V+ = 5 V 27 30
rDS vs. VCOM
V+ = 3 V
24
21
18
15
V+ = 5 V
2 VCOM
3
4
5
4-4
Document Number: 70831 S-63598--Rev. B, 26-Jul-99
DG9431
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
rDS vs. VCOM
35 85_C 28 25_C 21 40_C t ON / t OFF (nsec) r DS(on) ( W ) 50 40 30 tOFF 20 10 0 0 0.5 1.0 1.5 VCOM 2.0 2.5 3.0 0 -60 70 V+ = 3 V 60 tON
Switching Time vs. Temperature
14
7
-30
0
30
60
90
120
Temperature (_C)
tON/tOFF vs. Power Supply Voltage
120
Input Switching Point vs. Power Supply Voltage
2.25 2.00 1.75
100
T (nsec)
V IN (sw) tON tOFF
80
1.50 1.25 1.00
60
40
20
0.75 0.5 2.0 2.5 3.0 V+ 3.5 4.0 4.5 5.0 2 3 4 V+ 5 6
0 1.5
Document Number: 70831 S-63598--Rev. B, 26-Jul-99
www.vishay.com S FaxBack 408-970-5600
4-5
DG9431
Vishay Siliconix
TEST CIRCUITS
V+ Logic Input V+ Switch Input NO or NC IN Logic Input GND 0V CL (includes fixture and stray capacitance) VOUT + VCOM R L ) R ON RL Logic "1" = Switch On Logic input waveforms inverted for switches that have the opposite logic sense. RL 300 W CL 35 pF COM Switch Output VOUT 0.9 x VOUT Switch Output 0V tON tOFF +3V 50% 0V
tr t 20 ns tf t 20 ns
FIGURE 1. Switching Time
V+ Logic Input COM VO RL 300 W CL 35 pF 3V 0V tr <5 ns tf <5 ns
V+ VNO VNC NO NC IN GND
VNC = VNO VO Switch Output 0V
90%
tD
tD
CL (includes fixture and stray capacitance)
FIGURE 2. Break-Before-Make Interval
V+
Rgen + Vgen 3V
V+ NC or NO IN GND COM VOUT VOUT CL IN On
DVOUT
Off Q = DVOUT x CL
On
IN depends on switch configuration: input polarity determined by sense of switch.
FIGURE 3. Charge Injection
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4-6
Document Number: 70831 S-63598--Rev. B, 26-Jul-99
DG9431
Vishay Siliconix
TEST CIRCUITS
V+ 10 nF
V+ COM IN COM NC or NO Off Isolation + 20 log GND VNC NO VCOM 0V, 2.4 V
RL
Analyzer
FIGURE 4. Off-Isolation
V+ 10 nF
V+ COM Meter IN 0 V, 2.4 V NC or NO GND HP4192A Impedance Analyzer or Equivalent f = 1 MHz
FIGURE 5. Channel Off/On Capacitance
Document Number: 70831 S-63598--Rev. B, 26-Jul-99
www.vishay.com S FaxBack 408-970-5600
4-7

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